| PART |
Description |
Maker |
| WEDPN16M64VR-125BC WEDPN16M64VR-100BM WEDPN16M64VR |
125MHz; 3.3V power supply; 16M x 64 registered synchronous DRAM
100MHz; 3.3V power supply; 16M x 64 registered synchronous DRAM
133MHz; 3.3V power supply; 16M x 64 registered synchronous DRAM
|
White Electronic Designs
|
| R2005200P12 |
GaAs Reverse, 5 - 200MHz, 20.0dB typ. Gain @ 200MHz, 360mA max. @ 12VDC
|
PDI[PREMIER DEVICES, INC.]
|
| R2005240P12 |
GaAs Reverse, 5 - 200MHz, 24.2dB typ. Gain @ 200MHz, 360mA max. @ 12VDC
|
PDI[PREMIER DEVICES, INC.]
|
| ISL5500206 ISL55002IBZ-T7 ISL55002 ISL55002IB-T13 |
High Supply Voltage 200MHz Unity-Gain Stable Operational Amplifier
|
INTERSIL[Intersil Corporation]
|
| ISL5500406 ISL55004IBZ-T7 ISL55004 ISL55004IB ISL5 |
High Supply Voltage 200MHz Unity-Gain Stable Operational Amplifier
|
http://
INTERSIL[Intersil Corporation]
|
| MAX4353ESA |
Low-Cost, 3V/ 5V, 620μA, 200MHz, Single-Supply Op Amps with Rail-to-Rail Outputs
|
Maxim Integrated Produc...
|
| MAX4453EZA |
Low-Cost, 3V/ 5V, 620µA, 200MHz, Single-Supply Op Amps with Rail-to-Rail Outputs
|
MAXIM - Dallas Semiconductor
|
| HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY |
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168
16M x 64 Bit DRAM Module unbuffered
16M x 72 Bit ECC DRAM Module unbuffered
|
SIEMENS A G
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MIC912 MIC912BM5 |
200MHz Low-Power SOT-23-5 Op Amp
|
MICREL[Micrel Semiconductor]
|
| LH28F160S5H-L |
16M-bit (2MB x 8/1MB x 16) Smart 5 Flash Memories(16M(2Mx 8/1Mx 16) Smart5 技术闪速存储器)
|
Sharp Corporation
|
| EL5261IY-T13 |
200MHz Low-Power Current Feedback Amplifiers
|
Intersil Corporation
|
